Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code

Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used an important construction for environments with conditions, like those present in nuclear reactors. As such, it is constantly exposed energetic particles (e.g., neutrons) consequently subjected gradual crystal lattice degradation. In this article, the 6H-SiC damage simulated by implantation of 4 MeV C3+ ions (0001) axial direction a single ion fluences 1.359 1015 cm-2, 6.740 2.02 1016 cm-2. These implanted samples were subsequently analyzed Rutherford elastic backscattering spectrometry channeling orientation (RBS/C & EBS/C) usage 1 protons. Obtained spectra simulation phenomenological computer code (CSIM) obtain quantitative depth profiles. The difference between positions profile maxima obtained CSIM one stopping range matter (SRIM), Monte Carlo based focused on random only, about 10%. Therefore, due small shifts, iterative procedure calculating profiles proposed. It was shown that show very good agreement ones code. Additionally, introduction energy loss ratio scale conversion, becomes excellent.